Title :
A DC-18 GHz GaAs MESFET monolithic variable slope gain-equalizer IC
Author :
Sun, H.J. ; Morley, B.C.
Author_Institution :
Teledyne Monolithic Microwave, Mountain View, CA, USA
Abstract :
The design, fabrication and measured performance are presented for a DC-18 GHz GaAs MESFET monolithic variable-slope gain-equalizer IC. The IC design uses a modified bridged-T configuration using two GaAs MESFETs. This provides an attenuation slope of -0.67 dB/GHz at the maximum linear slope state with a minimum insertion loss of 2.7 dB at 18 GHz and a deviation of linearity less than 0.25 dB from DC to 18 GHz. The slope is electrically variable from -0.67 to +0.22 dB/GHz. The input and output VSWRs are less than 2:1 over the entire frequency and control range.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; equalisers; field effect integrated circuits; gallium arsenide; 0 to 18 GHz; 18 GHz; 2.7 dB; GaAs; MESFET; MMIC; VSWRs; attenuation slope; bridged-T configuration; design; deviation of linearity; fabrication; insertion loss; measured performance; semiconductors; variable slope gain equalizer MMIC; Attenuation; Electric variables control; Fabrication; Frequency; Gain measurement; Gallium arsenide; Insertion loss; Linearity; MESFET integrated circuits; Monolithic integrated circuits;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MCS.1989.37267
