An improved compact model for radiation effect characterization in SOI MOSFETs

Author

Yuqing Zhang ; Wenjun Li ; Jun Liu ; Xuan Lin

Author_Institution

Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

An improved compact model for radiation effect characterization in SOI MOSFETs is presented. This model is proposed by considering the threshold voltage degradation as a function of the total dose. The standard Berkeley BSIMSOI3 Verilog-A code implemented in ICCAP software was applied as a basis for modelling work.The accuracy of the model has been verified by comparison of simulated and measured post-radiation device characteristics of partially depleted (PD) SOI MOSFETs.

Keywords

MOSFET; hardware description languages; radiation hardening (electronics); semiconductor device models; silicon-on-insulator; Berkeley BSIMSOI3; ICCAP software; Verilog-A code; improved compact model; partially depleted SOI MOSFET; post-radiation device characteristics; radiation effect characterization; threshold voltage degradation; Abstracts; Analytical models; Logic gates; MOSFET; Semiconductor device modeling; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021477

Filename

7021477