Title :
An improved compact model for radiation effect characterization in SOI MOSFETs
Author :
Yuqing Zhang ; Wenjun Li ; Jun Liu ; Xuan Lin
Author_Institution :
Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
An improved compact model for radiation effect characterization in SOI MOSFETs is presented. This model is proposed by considering the threshold voltage degradation as a function of the total dose. The standard Berkeley BSIMSOI3 Verilog-A code implemented in ICCAP software was applied as a basis for modelling work.The accuracy of the model has been verified by comparison of simulated and measured post-radiation device characteristics of partially depleted (PD) SOI MOSFETs.
Keywords :
MOSFET; hardware description languages; radiation hardening (electronics); semiconductor device models; silicon-on-insulator; Berkeley BSIMSOI3; ICCAP software; Verilog-A code; improved compact model; partially depleted SOI MOSFET; post-radiation device characteristics; radiation effect characterization; threshold voltage degradation; Abstracts; Analytical models; Logic gates; MOSFET; Semiconductor device modeling; Silicon; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021477
