Simple nonlinear large signal MOSFET model parameter extraction for class E amplifiers

In the theoretical design of high-efficiency class E amplifiers the transistor is considered as a switching device. Including the device´s non-linear output capacitance and transistor´s internal losses as part of the design better predicts the actual performance of the amplifier. This paper presents a new parameter extraction method to obtain a simple high frequency large signal nonlinear MOS output port model from more sophisticated simulation models. The model parameters are obtained using a novel optimization technique specifically suited for non-linear switching applications. The model parameters are validated using a class E amplifier designed with an enhanced procedure that accounts for the non-linearity of the capacitance.