Title :
Monolithic V-band pseudomorphic-MODFET low-noise amplifier
Author :
Metze, G. ; Cornfeld, A. ; Singer, J. ; Carlson, H. ; Chang, E. ; Kirkendall, T. ; Dahrooge, G. ; Bass, J. ; Hung, H.L. ; Lee, T.
Author_Institution :
COMSAT Lab., Clarksburg, MD, USA
Abstract :
V-band low-noise MMICs based on pseudomorphic modulation-doped FETs (P-MODFETs) are designed, fabricated, and tested. It is seen that single-stage low-noise amplifiers with P-MODFETs as active elements (gate dimensions 0.35 mu m*60 mu m) exhibit minimum noise figures of 3.9 dB at 58 GHz, with an associated gain of 3.5 dB. Dual-stage MMICs have minimum noise figures of 5.3 dB at 58 GHz, with an associated gain of 8.2 dB and maximum gain of 10.4 dB at 59.5 GHz. A cascaded four-stage amplifier (two dual-stage MMIC modules) exhibits a 5.8-dB minimum noise figure at 58 GHz, with an associated gain of 18.3 dB, and 21.1 of dB of maximum gain. Device processing uniformity data as well as DC and RF reliability data are presented.<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; 3.5 to 21.1 dB; 3.9 to 5.8 dB; 58 to 59.5 GHz; EHF; LNA; MIMIC; MMIC; MMICs; V-band; gain; noise figures; processing uniformity; pseudomorphic modulation-doped FETs; pseudomorphic-MODFET low-noise amplifier; reliability data; Equivalent circuits; Etching; Fabrication; Gallium arsenide; Gold; Indium gallium arsenide; Laboratories; Low-noise amplifiers; MIM capacitors; Substrates;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MCS.1989.37275
