A monolithic 40-GHz HEMT low-noise amplifier

Author

Yuen, C. ; Nishimoto, C. ; Bandy, S. ; Zdasiuk, G.

Author_Institution

Varian Res. Center, Palo Alto, CA, USA

fYear

1989

fDate

12-13 June 1989

Firstpage

117

Lastpage

120

Abstract

A description is given of a monolithic, reactively matched 40-GHz low-noise amplifier using a 0.25- mu m high-electron-mobility transistor (HEMT) as the active device. Standard processing techniques were used for most of the fabrication steps. An amplifier using a triangular gate profile achieved approximately 6.5-dB gain and a 5-dB noise figure from 38 to 44 GHz. The gain of the amplifier increased to 8 dB and the noise figure decreased to 4 dB when the gate was replaced by one with a mushroom-like profile. The chip size is 1.1 mm*1.1 mm.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; 250 nm; 38 to 44 GHz; 5 to 4 dB; 6.5 to 8 dB; EHF; HEMT; MMIC; gain; high-electron-mobility transistor; low-noise amplifier; mushroom gate profile; noise figure; processing techniques; reactively matched; triangular gate profile; Distributed parameter circuits; Gain measurement; HEMTs; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Performance gain; Pulse amplifiers; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MCS.1989.37276

Filename

37276