• DocumentCode
    242125
  • Title

    Low-frequency noise analysis of DRAM peripheral transistors with La cap

  • Author

    Simoen, Eddy ; Ritzenthaler, R. ; Schram, T. ; Aoulaiche, Marc ; Spessot, A. ; Fazan, P. ; Na, H.-J. ; Lee, S.-G. ; Son, Yeongrack ; Noh, K.B. ; Arimura, H. ; Horiguchi, Naoto ; Thean, A. ; Claeys, Cor

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, the impact of the thermal budget on the low-frequency (LF) noise of DRAM peripheral n-channel transistors with La cap implemented in the high-κ/metal gate stack is investigated. Confirmation of previous reports on the beneficial impact of La in-diffusion on the oxide trap density is obtained. At the same time, a peak in the oxide trap profile is demonstrated close to the SiO2/HfO2 interface.
  • Keywords
    DRAM chips; high-k dielectric thin films; integrated circuit noise; lanthanum; DRAM peripheral transistors; LF noise; La; high-κ-metal gate stack; lanthanum cap; low-frequency noise analysis; oxide trap density; oxide trap profile; thermal budget; Abstracts; Logic gates; MOSFET; Noise; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021489
  • Filename
    7021489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=242125