• DocumentCode
    242130
  • Title

    Program charge effect on random telegraph noise behavior in multi-level floating gate flash memory

  • Author

    Xiaonan Yang ; Zongliang Huo ; Lei Jin ; Zongyong Wang ; Dandan Jiang ; Yan Wang ; Ming Liu

  • Author_Institution
    Sch. of Inf. Eng., Zhengzhou Univ., Zhengzhou, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Program charge effect on random telegraph noise (RTN) behavior in multi-level floating gate (FG) memory is investigated. RTN can be observed in inversion region and accumulation region for low and high threshold voltage (Vth) states, respectively. As Vth increases, capture time τc decreases and emission time τe increases. The RTN is induced by deeper and higher energy level traps as Vth increases. A physical model is proposed to interpret the phenomena based on change of “trap detection window”.
  • Keywords
    flash memories; integrated circuit noise; multilevel floating gate memory; program charge effect; random telegraph noise; trap detection window; Educational institutions; Energy measurement; Flash memories; Noise; Nonvolatile memory; Semiconductor device measurement; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021491
  • Filename
    7021491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=242130