Title :
18 GHz reverse channel HEMT oscillator
Author :
Correra, F.S. ; Camargo, E.
Author_Institution :
Lab. de Microelectron., Escola Politecnica, Sao Paulo, Brazil
Abstract :
A simple analytical equation is proposed for describing the high-electron-mobility transistor (HEMT) drain current. It has been implemented in the SPICE simulator. It accurately modeled the HEMT transconductance compression and was applied to nonlinear circuit simulation without convergence problems. Using this equation, an oscillator design approach combining linear and nonlinear analysis was used to design a doubly resonant oscillator operating at 18 GHz and using a HEMT in the reverse-channel configuration. The performance of the oscillator confirmed the main results predicted by the simulations. The oscillator generated +11 dBm at 18 GHz, and the circuit-device interaction predicted by the simulation was experimentally confirmed.<>
Keywords :
high electron mobility transistors; microwave oscillators; nonlinear network analysis; semiconductor device models; solid-state microwave circuits; 18 GHz; HEMT oscillator; SHF; SPICE simulator; doubly resonant oscillator; drain current; high-electron-mobility transistor; microwave circuits; nonlinear circuit simulation; oscillator design; reverse channel; transconductance compression; Circuit simulation; Convergence; HEMTs; MODFETs; Nonlinear circuits; Nonlinear equations; Oscillators; Predictive models; SPICE; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99610
