Title :
44 GHz hybrid low noise amplifiers using ion-implanted In/sub x/Ga/sub 1-x/As MESFETs
Author :
Lau, C.L. ; Feng, M. ; Wang, G.W. ; Lepkowski, T. ; Chang, Y. ; Ito, C. ; Dunn, V. ; Hodges, N. ; Schellenberg, J.
Author_Institution :
Ford Microelectron., Inc., Colorado Springs, CO, USA
Abstract :
Hybrid low-noise amplifiers using ion-implanted In/sub x/Ga/sub 1-x/As MESFETs with 0.25- mu m T-gates have been developed at 44 GHz. The hybrid two-stage amplifier using these ion-implanted In/sub x/Ga/sub 1-x/As MESFETs achieved a noise figure of 3.6 dB with an associated gain of 14.4 dB at 44 GHz. When two of these amplifiers were cascaded, the four-stage amplifier demonstrated a gain of 30.5 dB at 44 GHz and 37 dB at 40 GHz. These results, achieved using low cost ion-implantation techniques, rival the best high-electron-mobility transistor (HEMT) results.<>
Keywords :
Schottky gate field effect transistors; hybrid integrated circuits; ion implantation; microwave amplifiers; microwave integrated circuits; 0.25 micron; 14.4 dB; 3.6 dB; 30.5 to 37 dB; 44 GHz; EHF; InGaAs; MIC; T-gates; four-stage amplifier; hybrid low noise amplifiers; ion-implanted In/sub x/Ga/sub 1-x/As MESFETs; low cost ion-implantation techniques; two-stage amplifier; Gain; HEMTs; Indium gallium arsenide; Ion implantation; Low-noise amplifiers; MESFETs; MOCVD; Schottky barriers; Semiconductor device noise; Semiconductor materials;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99612
