Title :
Extraction of microwave noise parameters of FET devices
Author :
Colombani, F. ; Camargo, E.
Author_Institution :
Lab. de Microelectron., Sao Paulo Univ., Brazil
Abstract :
A technique is proposed for the extraction of the noise parameters of on-wafer, chip-mounted or packaged MESFETs and HEMTs (high-electron-mobility transistors). The approach includes the characterization of the device´s small-signal equivalent circuit using DC and RF measurements. A few microwave noise measurements are associated with computer fitting procedures to determine the noise coefficients P, R, and C, which completes the method. The procedure is used to determine the optimum source impedance of a Toshiba S8818A 0.3- mu m gate length MESFET, and the obtained parameters are compared with experimental results.<>
Keywords :
Schottky gate field effect transistors; electron device noise; equivalent circuits; field effect transistors; high electron mobility transistors; solid-state microwave devices; 0.3 micron; DC measurements; FET devices; HEMTs; MESFET; RF measurements; Toshiba S8818A; computer fitting procedures; high-electron-mobility transistors; microwave noise parameters; noise measurements; on-wafer devices; optimum source impedance; packaged devices; small-signal equivalent circuit; Circuit noise; Equivalent circuits; HEMTs; MESFETs; MODFETs; Microwave FETs; Microwave devices; Packaging; Radio frequency; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99614
