Extraction of microwave noise parameters of FET devices

Author

Colombani, F. ; Camargo, E.

Author_Institution

Lab. de Microelectron., Sao Paulo Univ., Brazil

fYear

1990

fDate

8-10 May 1990

Firstpage

439

Abstract

A technique is proposed for the extraction of the noise parameters of on-wafer, chip-mounted or packaged MESFETs and HEMTs (high-electron-mobility transistors). The approach includes the characterization of the device´s small-signal equivalent circuit using DC and RF measurements. A few microwave noise measurements are associated with computer fitting procedures to determine the noise coefficients P, R, and C, which completes the method. The procedure is used to determine the optimum source impedance of a Toshiba S8818A 0.3- mu m gate length MESFET, and the obtained parameters are compared with experimental results.<>

Keywords

Schottky gate field effect transistors; electron device noise; equivalent circuits; field effect transistors; high electron mobility transistors; solid-state microwave devices; 0.3 micron; DC measurements; FET devices; HEMTs; MESFET; RF measurements; Toshiba S8818A; computer fitting procedures; high-electron-mobility transistors; microwave noise parameters; noise measurements; on-wafer devices; optimum source impedance; packaged devices; small-signal equivalent circuit; Circuit noise; Equivalent circuits; HEMTs; MESFETs; MODFETs; Microwave FETs; Microwave devices; Packaging; Radio frequency; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99614

Filename

99614