Research progress on core-shell nanowire FETs

Silicon-based nanowire CMOS with the core-shell structure has not only excellent short-channel effect and enhanced conductance capability due to reduced scattering effect and unique low-dimensional structure, but also is compatible with the traditional CMOS processing, thus, it may be the promise one among the bulk MOSFET alternatives to extend CMOS integrated circuit into 10nm generation beyond. The work in the ULTRA group explored the novel structure, transport mechanism, simulation tool and compact modeling, strain effect, energy band engineering, so to develop the core-shell nanowire device physics theory, provide the new simulation tool, build an efficient compact model, and establish new fine process integration technique. The work deliverables will help device scientists and circuit designers deeply understand the potential and function of the silicon-based core-shell nanowire FET application beyond 10nm CMOS integrated circuit, know how to realize the optimized circuit performance from the fine processing technology and design.