Analytical modeling for double-gate TFET with tri-material gate

In this paper, a tri-material double-gate (TMDG) tunnel field effect transistor (TFET) is introduced. By using a variable separation technique, analytical full 2D channel potential and electric field models for TMDG TFET is derived from 2D Poisson´s equation. The electric field distribution is used to compute the tunneling generation rate and further numerically calculate the tunneling current. The results demonstrate that a smaller local minimum of conduction band at the source side and a larger tunneling barrier at the drain side are formed by the gate work function mismatch. This special band energy profile can significantly boost the on-state performance and suppress the off-state current induced by the ambipolar effect. The data extracted from the developed models are in good accordance with the TCAD simulation results.