A new multi-harmonic load-pull method for nonlinear device characterization and modeling

Author

Larose, R. ; Ghannouchi, F.M. ; Bosisio, R.G.

Author_Institution

Dept. of Electr. Eng., Ecole Polytech. de Montreal, Que., Canada

fYear

1990

fDate

8-10 May 1990

Firstpage

443

Abstract

A novel multiharmonic load-pull system based on an active load tuning configuration is presented. The system allows independent load-tuning of an excitation signal and its harmonics. Load-pull measurements on a MESFET (NEC 71083) have been performed at the fundamental (f/sub 0/), second (2f/sub 0/), and third (3f/sub 0/) harmonics. The results show the importance of such measurements in designing and modeling nonlinear devices and circuits.<>

Keywords

Schottky gate field effect transistors; automatic test equipment; automatic testing; harmonics; microwave measurement; semiconductor device models; semiconductor device testing; solid-state microwave devices; tuning; ATE; MESFET; NEC 71083; active load tuning configuration; device characterization; excitation signal; independent load-tuning; microcomputer controlled system; microwave device testing; modeling; multiharmonic load-pull system; nonlinear circuits; nonlinear devices; Circuits; Frequency; Impedance; MESFETs; Microwave transistors; National electric code; Performance evaluation; Power harmonic filters; Power system harmonics; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99615

Filename

99615