Title :
A high power 2-18 GHz T/R switch
Author :
Schindler, M.J. ; Kazior, T.E.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Abstract :
A high-power 2-18-GHz T/R (transient/receive) switch MMIC (monolithic microwave integrated circuit) has been developed for use in broadband T/R modules. This switch has power handling better than 35 dBm (3.2 W), 8 dB higher than that of any previously reported broadband switch. A combination of techniques was used to yield higher power handling while preserving low loss and high isolation. These circuit techniques include asymmetrical design of the transmit and receive arms, the use of dual-gate FETs for handling large voltages, and the use of large FET peripheries for handling large currents.<>
Keywords :
MMIC; field effect integrated circuits; radar equipment; radio equipment; semiconductor switches; switching circuits; 16 GHz; 2 to 18 GHz; 3.2 W; MMIC; SHF; T/R switch; asymmetrical design; broadband T/R modules; dual-gate FETs; high power switch; monolithic microwave integrated circuit; transient/receive switch; Arm; Bandwidth; FETs; Insertion loss; MMICs; Parasitic capacitance; Radio frequency; Switches; Switching circuits; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99617
