DocumentCode
2421483
Title
A high power 2-18 GHz T/R switch
Author
Schindler, M.J. ; Kazior, T.E.
Author_Institution
Raytheon Co., Lexington, MA, USA
fYear
1990
fDate
8-10 May 1990
Firstpage
453
Abstract
A high-power 2-18-GHz T/R (transient/receive) switch MMIC (monolithic microwave integrated circuit) has been developed for use in broadband T/R modules. This switch has power handling better than 35 dBm (3.2 W), 8 dB higher than that of any previously reported broadband switch. A combination of techniques was used to yield higher power handling while preserving low loss and high isolation. These circuit techniques include asymmetrical design of the transmit and receive arms, the use of dual-gate FETs for handling large voltages, and the use of large FET peripheries for handling large currents.<>
Keywords
MMIC; field effect integrated circuits; radar equipment; radio equipment; semiconductor switches; switching circuits; 16 GHz; 2 to 18 GHz; 3.2 W; MMIC; SHF; T/R switch; asymmetrical design; broadband T/R modules; dual-gate FETs; high power switch; monolithic microwave integrated circuit; transient/receive switch; Arm; Bandwidth; FETs; Insertion loss; MMICs; Parasitic capacitance; Radio frequency; Switches; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location
Dallas, TX
Type
conf
DOI
10.1109/MWSYM.1990.99617
Filename
99617
Link To Document