Title :
Silicon Micropin-Fin Heat Sink With Integrated TSVs for 3-D ICs: Tradeoff Analysis and Experimental Testing
Author :
Yue Zhang ; Dembla, Ashish ; Bakir, Muhannad S.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Microfluidic cooling is proposed as a solution to reject heat from a 3-D IC stack of high power chips. However, the integration of interlayer microfluidic cooling in 3-D ICs inevitably increases wafer thickness and thus presents possible challenges for through-silicon via (TSV) integration. This paper discusses the thermal and electrical co-design of a microfluidic heat sink compatible with TSV technology. A TSV-compatible micropin-fin heat sink (MPFHS) with a height of 200 μm, a micropin-fin diameter of 150 μm, and a pitch of 225 μm is fabricated. The fabricated MPFHS is experimentally shown to maintain the chip junction temperature at a power density for a flow rate of 70 mL/min. The thermal results are benchmarked with an air-cooled heat sink and a chip junction temperature reduction of is observed. A 3 × 3 array of TSVs, each with a diameter of 10 μm and a height of 178 μm (18:1 aspect ratio), is integrated into each micropin-fin. This results in a TSV density of 17424 cm-2 in the microfluidic heat sinks. Using four-point probing, the measured resistance of TSVs is 36.5±1.5 mΩ.
Keywords :
elemental semiconductors; heat sinks; integrated circuit testing; microfluidics; silicon; three-dimensional integrated circuits; 3-D IC; Si; TSV; air-cooled heat sink; chip junction temperature reduction; electrical co-design; four-point probing; high power chips; interlayer microfluidic cooling; microfluidic heat sink; micropin-fin heat sink; size 10 mum; size 150 mum; size 178 mum; size 200 mum; size 225 mum; thermal co-design; through-silicon via; wafer thickness; 3-D IC; electrical–thermal co-design of heat sink; microchannel heat sink (MFHS); micropin-fin heat sink (MPFHS); through-silicon via (TSV);
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2013.2267492