DocumentCode
2421555
Title
Fabrication of Position-controllable GaN Nanostructures
Author
Yang, Zhenchuan ; Zhang, Baoshun ; Lau, Kei May ; Chen, Kevin J.
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol.
fYear
2007
fDate
16-19 Jan. 2007
Firstpage
985
Lastpage
988
Abstract
We develop a technique for fabrication position-controllable GaN nanostructures. The fabrication process combines selective area growth of GaN structures on patterned substrate and wet chemical etching of the grown GaN structures. GaN nano-tips, nano-pillars and nano-blades are fabricated to demonstrate this technique. The mechanisms of the fabrication process are also discussed.
Keywords
III-V semiconductors; etching; gallium compounds; nanostructured materials; wide band gap semiconductors; GaN; GaN nano-blades; GaN nano-pillars; GaN nano-tips; GaN nanostructures; patterned substrate; position control; selective area growth; wet chemical etching; Chemicals; Dielectric substrates; Dry etching; Fabrication; Gallium nitride; III-V semiconductor materials; Nanostructures; Photonic band gap; Silicon compounds; Wet etching; Gallium nitride; crystallographic-dependent etching; dislocation-dependent etching; nanostructures; selective area growth;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location
Bangkok
Print_ISBN
1-4244-0610-2
Type
conf
DOI
10.1109/NEMS.2007.352183
Filename
4160486
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