Title :
Fabrication of Position-controllable GaN Nanostructures
Author :
Yang, Zhenchuan ; Zhang, Baoshun ; Lau, Kei May ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol.
Abstract :
We develop a technique for fabrication position-controllable GaN nanostructures. The fabrication process combines selective area growth of GaN structures on patterned substrate and wet chemical etching of the grown GaN structures. GaN nano-tips, nano-pillars and nano-blades are fabricated to demonstrate this technique. The mechanisms of the fabrication process are also discussed.
Keywords :
III-V semiconductors; etching; gallium compounds; nanostructured materials; wide band gap semiconductors; GaN; GaN nano-blades; GaN nano-pillars; GaN nano-tips; GaN nanostructures; patterned substrate; position control; selective area growth; wet chemical etching; Chemicals; Dielectric substrates; Dry etching; Fabrication; Gallium nitride; III-V semiconductor materials; Nanostructures; Photonic band gap; Silicon compounds; Wet etching; Gallium nitride; crystallographic-dependent etching; dislocation-dependent etching; nanostructures; selective area growth;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
1-4244-0610-2
DOI :
10.1109/NEMS.2007.352183
