DocumentCode :
242158
Title :
Design of silicon-based Transient Voltage Suppressor to meet IEC system-level ESD specification for RS485 transceiver
Author :
Xiangliang Jin ; Huihui Yuan ; Qi Jiang ; Yang Wang
Author_Institution :
Fac. of Mater., Optoelectron. & Phys., Xiangtan Univ., Xiangtan, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
The Transient Voltage Suppressor (TVS) arrays are the best choice to protect RS485 interface transceiver. This paper proposes an On-Chip TVS (OCT) embedded in the half-duplex RS485 transceiver IC. It is composed of zener diodes and ordinary diodes and fabricated on 0.5μm CDMOS technology without extra process modification. RS485 transceiver with OCT has also been tested under the condition of IEC 61000-4-2 contact ±10kV stress and IEC 61000-4-4 Electrical Fast Transient (EFT) ±2KV stress. Results show no hard damage and latch-up issue. The RS485 transceiver chip occupies an area of 2.4×1.17mm2.
Keywords :
CMOS integrated circuits; Zener diodes; transceivers; transients; CDMOS technology; IEC 61000-4-4 electrical fast transient; IEC system-level ESD specification; OCT; RS485 interface transceiver; TVS arrays; Zener diodes; half-duplex RS485 transceiver IC; on-chip TVS; silicon-based transient voltage suppressor; Abstracts; Ammeters; Contacts; IEC standards; Reliability; Stress; Transceivers; OCT; RS485; ordinary diode; zener diode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021505
Filename :
7021505
Link To Document :
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