Title :
Plasma enhanced chemical vapor deposition ultralow dielectric constant films using triethoxymethylsilane and limonene as precursors
Author :
Zi-Jun Ding ; Shi-Jin Ding ; Wei Zhang
Author_Institution :
Sch. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
Ultralow dielectric-constant (κ) porous SiCO(H) films were prepared using C7H18O3Si (MTES) and C10H16 (LIMO) precursors by plasma enhanced chemical vapor deposition (PECVD) and post-deposition annealing. This paper well demonstrated the effect of LIMO/MTES flow rate ratio on the performance of the SiCO(H) film. When the flow rate ratio was 1.5, the SiCO(H) films exhibited the lowest κ value of 2.2 and extremely low leakage current density of 5.3×10-9 A/cm2 at 1 MV/cm, Young´s modulus of 4.23 GPa, and hardness of 0.55 GPa after annealing at 420°C for 4 h in N2 ambient.
Keywords :
Young´s modulus; annealing; current density; hardness; low-k dielectric thin films; permittivity; plasma CVD; porosity; porous materials; silicon compounds; C10H16 precursors; C7H18O3Si precursors; LlMO-MTES flow rate ratio; N2 ambient; PECVD; SiCO(H); Ultralow dielectric-constant porous SiCO(H) films; Young´s modulus; extremely low leakage current density; hardness; limonene; plasma enhanced chemical vapor deposition ultralow dielectric constant films; post-deposition annealing; temperature 420 degC; time 2 h; triethoxymethylsilane; Abstracts; Annealing; Films;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021509
