A three stage, fully differential D-band power amplifier

Author

Le Zhang ; Jincai Wen ; Lingling Sun ; Ting Wu

Author_Institution

Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

This paper describes a 3-stage, fully differential D-band power amplifier (PA) using 0.13 μm SiGe BiCMOS technology. The fully differential common emitter (CE) configuration is adopted. The PA consists of baluns used as power splitter and combiner respectively and two simple L-type inter-stage impedance matching networks. The simulation results show that the proposed amplifier has a power gain of 12.9 dB, a saturation output power of 9.3 dBm and a peak PAE of 10.8% at 150 GHz frequency. And the output power of the PA superior to 8 dBm over the frequency range of 130-170 GHz. The power consumption is 56 mW and the designed PA size is as compact as 0.53mm×0.35mm.

Keywords

BiCMOS analogue integrated circuits; millimetre wave integrated circuits; millimetre wave power amplifiers; BiCMOS technology; CE configuration; L-type interstage impedance matching networks; baluns; common emitter configuration; frequency 130 GHz to 170 GHz; fully differential D-band power amplifier; gain 12.9 dB; power 56 mW; power combiner; power splitter; three stage PA; Gain; Heterojunction bipolar transistors; Impedance matching; Power amplifiers; Power generation; Silicon germanium; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021512

Filename

7021512