DocumentCode :
242178
Title :
Stacked-cascode Class-E power amplifier with delay-controlled auxiliary branches in 65nm CMOS
Author :
Fan Yang ; Yu Liao ; Tao Xia ; Runhua Wang ; Ru Huang ; Huailin Liao
Author_Institution :
Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
Low breakdown voltage in deep-submicron CMOS devices has limited the supply voltage and output power of power amplifiers (PAs). In this paper, a differential cascode Class-E PA in 65nm CMOS is proposed. Using only the standard devices, the stacked-cascode structure can endure a maximum voltage up to 10V so that a supply voltage of 3.3V is possible for Class-E PA. An auxiliary branch is added to reduce the turn-on resistance. With an inductor to delay the control signal phase of the branch, the proposed PA has a power dissipation trade-off between the devices´ on/off state. At 1.6GHz, the proposed Class-E PA achieves Power Added Efficiency (PAE) of 57.5% when it transmits 31.3dBm power.
Keywords :
CMOS integrated circuits; UHF amplifiers; power amplifiers; CMOS; Class-E power amplifier; frequency 1.6 GHz; inductor; power added efficiency; power dissipation; size 65 nm; turn-on resistance; voltage 10 V; voltage 3.3 V; Breakdown voltage; CMOS integrated circuits; Delays; Inductors; Power amplifiers; Power generation; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021516
Filename :
7021516
Link To Document :
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