DocumentCode :
2421782
Title :
On the nature of the instabilities of bistable electron devices
Author :
Daneshvar, K. ; Singco, G.
Author_Institution :
North Carolina Univ., Charlotte, NC, USA
fYear :
1991
fDate :
10-12 Mar 1991
Firstpage :
369
Lastpage :
372
Abstract :
The intrinsic bistability in resonant tunneling devices and its application for multilevel logic devices is examined. The results indicate that commonly accepted bistability is actually a tristability. The third stable configuration could have a major effect in the operation of high speed logic devices. Furthermore, the nature of the third state in a bistable system results in a better understanding of the mechanism which is commonly associated with bistable systems
Keywords :
equivalent circuits; logic devices; many-valued logics; resonant tunnelling devices; semiconductor device models; semiconductor quantum wells; stability; bistable electron devices; bistable logic; intrinsic bistability; multilevel logic devices; negative differential resistance; resonant tunneling devices; Circuits; Electron devices; Electron emission; Gallium arsenide; Logic devices; Resistors; Resonant tunneling devices; Semiconductor diodes; Semiconductor superlattices; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
System Theory, 1991. Proceedings., Twenty-Third Southeastern Symposium on
Conference_Location :
Columbia, SC
ISSN :
0094-2898
Print_ISBN :
0-8186-2190-7
Type :
conf
DOI :
10.1109/SSST.1991.138582
Filename :
138582
Link To Document :
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