An InGaP/GaAs HBT power amplifier for 4.9–5.9 GHz Wireless-LAN applications

Author

Liang Huang ; Zhihao Zhang ; Sizhen Li ; Zhang, Ge

Author_Institution

Guangdong Univ. of Technol., Guangzhou, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

This paper presents an InGaP/GaAs HBT power amplifier (PA) for mobile terminals used in 4.9-5.9 GHz broadband wireless applications. The PA consists of a 3-stage structure for high gain. The inter-stage matching networks, which based on an analysis of a novel matching theory, were designed for efficiency and wideband. The output matching network was designed to have a reduced insertion loss and wideband operation. The fabricated PA achieved 26 dB small signal gain with less than 1 dB variation over the frequency range of 4.9-5.9 GHz. The PA also exhibited linear output power levels of 20.5 and 19.5 dBm at EVM values of 5.0% at 4.9GHz and 5.4GHz, respectively, measured with 54 Mb/s 64-QAM-OFDM signals at a supply voltage of 3.4 V.

Keywords

III-V semiconductors; broadband networks; error analysis; gallium arsenide; heterojunction bipolar transistors; indium compounds; losses; microwave power amplifiers; wireless LAN; 3-stage structure; 64-QAM-OFDM signals; EVM values; HBT PA; HBT power amplifier; InGaP-GaAs; bit rate 54 Mbit/s; broadband wireless applications; efficiency design; error vector magnitude; frequency 4.9 GHz to 5.9 GHz; insertion loss reduction; interstage matching network theory; linear output power levels; mobile terminals; signal gain; supply voltage; voltage 3.4 V; wideband operation design; wireless-LAN applications; Abstracts; Educational institutions; Harmonic analysis; Local area networks; MMICs; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021517

Filename

7021517