Title :
FIB methodologies to analyze buried defects in wafer manufacture process
Author :
Yaobin Zhao ; Haibo Dai ; Lee, J.H. ; Zhang, M. ; Yang, May ; Chian, Kary
Author_Institution :
Econ.-Technol. Dev. Area, Semicond. Manuf. Int. (Beijing) Corp, Beijing, China
Abstract :
Buried defects were hardly analyzed due to invisibility in defect analysis tool - dual beam FIB (Focus Ion Beam) system- before; two methodologies were presented to analyze two types´ buried defects in this paper. One method locate defects by combining defect image and layout analysis, the other method locate defect by nearby visible structure under SEM and OM. Two cases were given to show how the methodologies worked.
Keywords :
buried layers; crystal defects; focused ion beam technology; semiconductor technology; FIB methodology; buried defects; defect analysis tool; dual beam FIB system; focus ion beam system; wafer manufacture process; Abstracts; Inspection; Navigation;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021521
