Title :
A rigorous analytical model for short-channel junctionless double-gate MOSFETs
Author :
Chunsheng Jiang ; Renrong Liang ; Jing Wang ; Jun Xu
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
Abstract :
Inspired by the Green function theory, a physics-based short-channel electrostatic potential model for junctionless double-gate MOSFETs was proposed based on method of series expansion and method of undetermined coefficients to solve the Poisson´s equation. Threshold voltage model and subthreshold slope model were derived from the developed electrostatic potential model, respectively. Device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide, drain voltage and gate voltage were considered. Results of the analytical models agreed well with numerical solutions from a 3-D simulator. These models may help us investigate the physical mechanism of junctionless double-gate MOSFETs.
Keywords :
MOSFET; Poisson equation; semiconductor device models; semiconductor doping; 3D simulator; Poisson equation; channel thickness; doping concentration; double gate MOSFET; drain voltage; gate length; gate oxide; gate voltage; junctionless MOSFET; rigorous analytical model; series expansion; short channel MOSFET; short channel electrostatic potential model; subthreshold slope model; undetermined coefficient; Abstracts; Logic gates; MOSFET; Manuals; Semiconductor device modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021524