Title :
Improvement of retention and endurance characteristics of Si nanocrystal nonvolatile memory device
Author :
Jie Yu ; Zhongyuan Ma ; Yuefei Wang ; Sheng Ren ; Zhonghui Fang ; Xinfan Huang ; Kunji Chen ; Guanping Wu ; Yongxing Zhang ; Lingling Wang
Author_Institution :
Sch. of Electron Sci. & Eng., Nanjing Univ., Nanjing, China
Abstract :
The nitrided nc-Si floating gate nonvolatile memory device with an ultrathin tunnel (3.5 nm) oxide layer was fabricated. A memory window of 1.3 V was obtained under P/E voltages of ±7 V for 1 ms, and it kept still about 1.1 V after ten years from the extrapolated data of retention characteristics. These results can be attributed to the nitrogen passivation of the traps at the surface of nc-Si. In addition, no detectable variation of the memory window has been displayed after 107 P/E cycles, showing superior endurance characteristics.
Keywords :
elemental semiconductors; nanostructured materials; passivation; random-access storage; silicon; Si; extrapolated data; memory window; nanocrystal nonvolatile memory device; nitrided nc-Si floating gate nonvolatile memory device; nitrogen passivation; retention characteristics; size 3.5 nm; ultrathin tunnel oxide layer; voltage 1.3 V; Abstracts; Irrigation; Nanocrystals; Nitrogen; Nonvolatile memory;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021526