Characterization of the SONOS nonvolatile memory cell using L-shaped channel structure

In this paper, we apply a novel metal oxide semiconductor field effect transistor with various L-shaped channel structure (L-MOS) for SONOS-type nonvolatile memory applications (L-SONOS). Studies and comparisons between conventional SONOS device (Conv-SONOS) and L-SONOS at the same average gate length (L_avg) are presented. The electrical characteristics and memory performances are analyzed and evaluated by three dimension (3-D) Sentaurus TCAD simulation tool. It can be confirmed that the L-SONOS devices have higher on-state drain current and better gate controllability than its conventional counterpart has. In addition, the V_th shift value of the L-SONOS can improved more than 50%, and retention time performance are also better than the conventional one.