Title :
A quasi-2D lumped charge model for IEC-GCT
Author :
Zhang Ruliang ; Gao Yong ; Wang Cailin ; Yuan, Yang
Author_Institution :
Dept. of Electron. Eng., Xi´´an Univ. of Technol., Xi´´an, China
Abstract :
A quasi two-dimension lumped charge model, is presented for a novel power device, injection efficiency controlled gate commutated thyristor. In order to lower modeling complexity of the dual-emitters anode, an equivalent structure with a p+-doping area and a pn+n diode is proposed for a physics-based quasi-2D circuit simulation model. The model was successfully built for device dynamic characteristic simulation with SABER. And the results agree well with the switching performance derived from the device-based simulator ISE-TCAD. It is shown that the equivalent modeling structure is feasible and the proposed model is suitable for circuit simulation of a 2.5 kV/2 kA device.
Keywords :
circuit simulation; equivalent circuits; thyristors; IEC-GCT; circuit simulation; dual-emitters anode; injection efficiency controlled gate commutated thyristor; quasi-2D lumped charge model; Anodes; Circuit simulation; Diodes; Electrons; Equivalent circuits; Kirchhoff´s Law; MOSFETs; Switches; Thyristors; Voltage; gate commutated thyristor; lumped charge modeling; physics-based model; quasi two-dimension;
Conference_Titel :
Power Electronics and Motion Control Conference, 2009. IPEMC '09. IEEE 6th International
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-3556-2
Electronic_ISBN :
978-1-4244-3557-9
DOI :
10.1109/IPEMC.2009.5157568
