A quasi-2D lumped charge model for IEC-GCT

A quasi two-dimension lumped charge model, is presented for a novel power device, injection efficiency controlled gate commutated thyristor. In order to lower modeling complexity of the dual-emitters anode, an equivalent structure with a p⁺-doping area and a pn⁺n diode is proposed for a physics-based quasi-2D circuit simulation model. The model was successfully built for device dynamic characteristic simulation with SABER. And the results agree well with the switching performance derived from the device-based simulator ISE-TCAD. It is shown that the equivalent modeling structure is feasible and the proposed model is suitable for circuit simulation of a 2.5 kV/2 kA device.