Title :
The Effects of Substrate Mounds and Pits on the Periodicity of Cross-Hatch Surface and Subsequent Formation of Quantum Dots
Author :
Thet, Cho Cho ; Kanjanachuchai, Songphol ; Panyakeow, Somsak
Author_Institution :
Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok
Abstract :
Self assembled InAs QDs on cross-hatch virtual substrate (VS) consisting of 50-nm-thick InxGa1-xAs/GaAs(001) are grown. The periodicity of cross-hatch patterns are collapsed due to the formation of substrate mounds and pits during pre-heat GaAs substrate. The subsequent growth of QDs on the deformed cross-hatch surface is studied by atomic force microscopy (AFM).
Keywords :
III-V semiconductors; atomic force microscopy; indium compounds; semiconductor growth; semiconductor quantum dots; InAs quantum dots; InGaAs-GaAs; atomic force microscopy; cross hatch surface; cross hatch virtual substrate; periodicity; substrate mounds; substrate pits; Atomic force microscopy; Epitaxial layers; Gallium arsenide; Quantum computing; Quantum dots; Substrates; Surface morphology; Surface reconstruction; Systems engineering and theory; Temperature; Atomic Force Microscopy; Cross-hatch Virtual Substrate; InAs Quantum Dots; Substrate Pits;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
1-4244-0610-2
DOI :
10.1109/NEMS.2007.352219
