Analysis of GCT temperature characteristics

Author

Zhang Ruliang ; Gao Yong ; Wang Cailin ; An Tao

Author_Institution

Dept. of Electron. Eng., Xi´an Univ. of Technol., Xi´an, China

fYear

2009

fDate

17-20 May 2009

Firstpage

1217

Lastpage

1219

Abstract

Temperature performances on gate commutated thyristor characteristics were investigated. The temperature dependency in blocking, on-state and turn-off, have been analyzed. Temperature influence on safe operating area has also been discussed. The results from simulator ISE-TCAD agree well with the proposed theoretic analysis. It shows that the presented temperature dependency mechanism is reasonable and helpful to trade-off for thermal and SOA in IGCT application.

Keywords

technology CAD (electronics); thyristors; IGCT application; ISE-TCAD; gate commutated thyristor characteristics; on-state; safe operating area; temperature characteristics; temperature dependency mechanism; theoretic analysis; turn-off; Analytical models; Anodes; Channel bank filters; Charge carrier lifetime; Current density; Performance analysis; Semiconductor optical amplifiers; Temperature dependence; Thyristors; Voltage; gate commutated thyristor; power semiconductor; safe operating area; temperature performance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2009. IPEMC '09. IEEE 6th International

Conference_Location

Wuhan

Print_ISBN

978-1-4244-3556-2

Electronic_ISBN

978-1-4244-3557-9

Type

conf

DOI

10.1109/IPEMC.2009.5157569

Filename

5157569