Title :
Analysis of current commutation mechanism and design consideration of IGCT
Author :
Wang, Cailin ; Zhang, Ruliang ; Gao, Yong ; An, Tao
Author_Institution :
Dept. of Electron. Eng., Xi´´an Univ. of Technol., Xi´´an, China
Abstract :
The switching characteristics of integrated gate-commutated thyristor (IGCT) is simulated by MEIDICI simulator. Based on the simulation results, the current commutation mechanism of GCT during switching is analyzed, and the design consideration of the gate-cathode layout of GCT is given. The results show that anode current in GCT commutes abruptly to gate during turn-off, and GCT corresponds to an open-base pnp transistor. Thus the gate-cathode layout of GCT should be differing from GTO. Lastly, a new gate-cathode layout of GCT with trapeziform cathode unit is given.
Keywords :
commutation; semiconductor device models; thyristors; IGCT; MEIDICI simulator; current commutation mechanism; gate-cathode layout; integrated gate-commutated thyristor; open-base pnp transistor; Analytical models; Anodes; Cathodes; Circuits; Inductance; Medical simulation; Semiconductor device packaging; Semiconductor optical amplifiers; Shape; Thyristors; Intrgrated Gate Commutated Thyristor (IGCT); current commutation mechanism; gate turn-off thyristor (GTO); gate-cathode; layout; power semiconductor devices;
Conference_Titel :
Power Electronics and Motion Control Conference, 2009. IPEMC '09. IEEE 6th International
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-3556-2
Electronic_ISBN :
978-1-4244-3557-9
DOI :
10.1109/IPEMC.2009.5157574
