Center for Advanced Microstructures and Devices at Louisiana State University for X-ray lithography research

Author

Ajmera, P.K. ; Scott, J.D. ; Craft, B.C. ; Kinney, R.A.

Author_Institution

Center for Adv. Microstructures & Devices, Louisiana State Univ., Baton Rouge, LA, USA

fYear

1989

fDate

12-14 Jun 1989

Firstpage

76

Lastpage

79

Abstract

A status report on the Center for Advanced Microstructures and Devices (CAMD) at Louisiana State University is presented. The centerpiece of CAMD is a 1.2 GeV electron storage ring optimized for X-ray lithography research. Currently, research is under way to design an optimized beamline for X-ray lithography. Some of the parameters of the storage ring and the requirements for the facility to house the storage ring are described. Preliminary results on the available power at the wafer plane for exposure utilizing the CAMD storage ring are presented and compared to those of two other storage rings in the US. Calculations on the photon power incident on a vertical wafer plane are presented for a beamline containing two Be windows and two grazing incidence gold reflecting mirrors

Keywords

X-ray lithography; beam handling techniques; storage rings; 1.2 GeV; Be windows; Center for Advanced Microstructures and Devices; Louisiana State University; X-ray lithography research; beamline design; electron storage ring; grazing incidence gold reflecting mirrors; photon power; wafer plane; Circuits; Educational institutions; Electron optics; Microstructure; Space technology; Storage rings; Superconducting magnets; Synchrotron radiation; Throughput; X-ray lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth

Conference_Location

Westborough, MA

ISSN

0749-6877

Type

conf

DOI

10.1109/UGIM.1989.37305

Filename

37305