Title :
High current gain 4H-SiC BJT for limiting surface states effect
Author :
ChengChun Sun ; YouRun Zhang ; Xiaochuan Deng ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin film & Integrated Device, Univ. of Electron., Chengdu, China
Abstract :
In this paper, a novel 4H-SiC BJT is proposed to obtain a high current gain by separating electron and hole near the SiC/SiO2 surface. It is effective to improve the current gain by extending the emitter metal to overlap the passivation layer on the extrinsic base which modulates the surface potential. Compared with the conventional BJTs, the surface recombination rate decreases and the current gain improves by 63.2% with the compatible process technology. The optimized size is oxide layer thickness in the order of 50 nm and overlapping metal length in the order of 4 μm.
Keywords :
bipolar transistors; passivation; silicon compounds; surface potential; surface recombination; surface states; wide band gap semiconductors; 4H-SiC BJT; SiC-SiO2 surface; SiC-SiO2; current gain; emitter metal; extrinsic base; limiting surface states effect; oxide layer thickness; passivation layer; size 4 mum; size 50 nm; surface potential; surface recombination rate; Abstracts; Annealing; Doping; Epitaxial growth; Limiting; Silicon carbide; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021542
