Title :
University facilities and safety considerations for LPCVD and ion implantation
Author :
Blondell, S.P. ; Fuller, L.F. ; Runkle, G.A. ; Pearson, R.E.
Author_Institution :
Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
The development of a comprehensive safety policy connected with the introduction of low-pressure chemical vapor deposition (LPCVD) and ion implantation at the Center for Microelectronics Engineering at RIT (Rochester Institute of Technology) is described. The scope of this safety policy includes equipment and facilities requirements, operational procedures, and personnel training. Such a plan must be coordinated with local emergency response teams and the RIT Office of Campus Safety. In addition, it must also meet the requirements of the Occupational Safety and Health Act, the Environmental Protection Agency, and state and local authorities
Keywords :
chemical vapour deposition; integrated circuit technology; ion implantation; safety; Environmental Protection Agency; LPCVD; RIT; Rochester Institute of Technology; emergency response teams; facilities requirements; ion implantation; low-pressure chemical vapor deposition; personnel training; safety considerations; safety policy; Chemical technology; Chemical vapor deposition; Ion implantation; Local government; Microelectronics; Occupational safety; Personnel; Protection; Railway safety; Safety devices;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth
Conference_Location :
Westborough, MA
DOI :
10.1109/UGIM.1989.37316
