Title :
Polysilicon gate NMOS project for undergraduate laboratory
Author :
Lane, R.L. ; Price, D.T. ; Smith, B.W. ; Pearson, R.E. ; Turkman, I.R. ; Fuller, L.F.
Author_Institution :
Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
Several new processing capabilities have recently been commissioned in the RIT (Rochester Institute of Technology) microelectronic engineering laboratory. These include: (1) ion implantation; (2) LPCVD (low-pressure chemical vapor deposition) polysilicon; and (3) dry (plasma) etching. The development of these processes is part of a long-range goal to include CMOS technology in the undergraduate laboratory program. The object of this work was to develop a four-level NMOS process sequence utilizing these available processes in a way which would be suitable for an undergraduate laboratory project. The implementation of the project for a typical class is described, and some of the results and experiences are presented. A class of twenty students completed the project, including device design, wafer fabrication, and testing, in a period of six weeks, working six hours per week. Working devices were obtained, indicating that a base-line process is now available which can be optimized with further process development. The threshold voltage increased with increased implant dose, as expected
Keywords :
MOS integrated circuits; chemical vapour deposition; education; ion implantation; laboratory apparatus and techniques; sputter etching; LPCVD; NMOS project; RIT; base-line process; device design; etching; ion implantation; microelectronic engineering laboratory; polysilicon; process sequence; students; undergraduate laboratory; wafer fabrication; CMOS technology; Chemical technology; Chemical vapor deposition; Ion implantation; Laboratories; MOS devices; Microelectronics; Plasma applications; Plasma chemistry; Plasma immersion ion implantation;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth
Conference_Location :
Westborough, MA
DOI :
10.1109/UGIM.1989.37320