DocumentCode :
2422536
Title :
Displacement current and trapping mechanisms of electric charges in TiO2-rutile
Author :
Temga, T. ; Guerret-Piecourt, C. ; Juvé, D. ; Tréheux, D. ; Jardin, C.
Author_Institution :
Ecole Centrale de Lyon, Ecully, France
fYear :
2003
fDate :
19-22 Oct. 2003
Firstpage :
221
Lastpage :
224
Abstract :
The Scanning Electron Microscopy Mirror Effect (SEMME) and the Induced Current Measurement (ICM) have been used to characterize insulators. The application of these methods to a semiconducting material of wide band gap (TiO2) reveals that the material presents a great leakage surface current and high anisotropy of dielectric properties. The goal of the present communication is to understand and study such a behaviour.
Keywords :
electric breakdown; leakage currents; scanning electron microscopy; titanium compounds; TiO2; TiO2-rutile; dielectric properties anisotropy; displacement current; electric charges; induced current measurement; insulators; leakage surface current; scanning electron microscopy mirror effect; trapping mechanisms; wide band gap; Anisotropic magnetoresistance; Current measurement; Dielectric materials; Dielectrics and electrical insulation; Electron traps; Mirrors; Scanning electron microscopy; Semiconductivity; Semiconductor materials; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 2003. Annual Report. Conference on
Print_ISBN :
0-7803-7910-1
Type :
conf
DOI :
10.1109/CEIDP.2003.1254833
Filename :
1254833
Link To Document :
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