A GaAs DC-20 GHz SPDT absorptive switch

Author

Khabbaz, Brian ; Morais, Steven ; Powell, Scott

Author_Institution

Sanders Associates Inc., Nashua, NH, USA

fYear

1989

fDate

12-14 Jun 1989

Firstpage

165

Lastpage

167

Abstract

A GaAs monolithic microwave integrated circuit (MMIC) absorptive SPDT MESFET switch has been designed to operate from DC to 20 GHz. The circuit provides greater than 42-dB isolation and less than 3.3-dB insertion loss up to 20 GHz. The VSWR (voltage standing-wave ratio) of all ports is better than 2:1 over the entire frequency range. The circuit has performance close to PIN diode switches, but has several advantages such as operation to DC, fast switching speed, and low power needed to drive the MESFET switch. In addition to the absorptive switch, results on a variety of other designs are presented to demonstrate the versatility of MMIC MESFET switches. The ease of integration with other MMIC components is recognized as a valuable characteristic of MMIC MESFET switches

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; gallium arsenide; switching circuits; 0 to 20 GHz; GaAs; MESFET switch; MMIC; SPDT absorptive switch; VSWR; insertion loss; isolation; monolithic microwave integrated circuit; switching speed; Frequency; Gallium arsenide; Insertion loss; MESFET integrated circuits; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth

Conference_Location

Westborough, MA

ISSN

0749-6877

Type

conf

DOI

10.1109/UGIM.1989.37327

Filename

37327