A two-dimensional analytical model for MOSFETs operating at 77 K

An analytical two-dimensional model is described for MOSFETs operating at room and cryogenic temperatures. The formulation involves determining the two-dimensional potential distribution under the gate using a three-region model. This in turn is used to evaluate various device parameters and transport characteristics. In particular, MOSFET behavior in the subthreshold, linear, and saturation regions is investigated. The computed results on n-channel field-effect transistors having channel lengths ranging between 1 and 8 μm are compared with experimental and numerical data for both room temperature and 77 K operations. Computed I_d-V_g and I_d-V_d characteristics are in agreement with the experiments in subthreshold, weak, and moderate regions. In addition, the present model compares well with numerical simulations obtained using the MINIMOS software package