DocumentCode :
2422768
Title :
The extraction of HEMT transistor DC parameters using the transistor electrical characterization and analysis program (TECAP)
Author :
Khakzar, H.
fYear :
1989
fDate :
12-14 Jun 1989
Firstpage :
211
Lastpage :
214
Abstract :
TECAP has three models for the GaAs MESFET, the quadratic model, the cubic model, and the Statz model. The authors investigated the accuracy of these three models. The maximum error and the r.m.s. (root mean square) error between simulated and measured DC characteristics ID vs. VGS and ID vs. VDS show that the Statz model has the best accuracy for HEMT (high electron mobility transistor) DC simulation
Keywords :
electronic engineering computing; errors; high electron mobility transistors; semiconductor device models; DC simulation; GaAs; HEMT; MESFET; Statz model; TECAP; cubic model; high electron mobility transistor; maximum error; model accuracy; quadratic model; root mean square; transistor DC parameters; Current measurement; Equations; HEMTs; Intrusion detection; Laboratories; Microelectronics; SPICE; Silicon; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth
Conference_Location :
Westborough, MA
ISSN :
0749-6877
Type :
conf
DOI :
10.1109/UGIM.1989.37337
Filename :
37337
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2422768
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