• DocumentCode
    2422768
  • Title

    The extraction of HEMT transistor DC parameters using the transistor electrical characterization and analysis program (TECAP)

  • Author

    Khakzar, H.

  • fYear
    1989
  • fDate
    12-14 Jun 1989
  • Firstpage
    211
  • Lastpage
    214
  • Abstract
    TECAP has three models for the GaAs MESFET, the quadratic model, the cubic model, and the Statz model. The authors investigated the accuracy of these three models. The maximum error and the r.m.s. (root mean square) error between simulated and measured DC characteristics ID vs. VGS and ID vs. VDS show that the Statz model has the best accuracy for HEMT (high electron mobility transistor) DC simulation
  • Keywords
    electronic engineering computing; errors; high electron mobility transistors; semiconductor device models; DC simulation; GaAs; HEMT; MESFET; Statz model; TECAP; cubic model; high electron mobility transistor; maximum error; model accuracy; quadratic model; root mean square; transistor DC parameters; Current measurement; Equations; HEMTs; Intrusion detection; Laboratories; Microelectronics; SPICE; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth
  • Conference_Location
    Westborough, MA
  • ISSN
    0749-6877
  • Type

    conf

  • DOI
    10.1109/UGIM.1989.37337
  • Filename
    37337
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2422768