Title :
Modeling the heterojunction bipolar transistor for integrated circuit simulation
Author :
Liou, J.J. ; Drafts, W. ; Yuan, J.S.
Author_Institution :
Dept. of Electr. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
Based on the concept of the conventional Gummel-Poon model for Si homojunction bipolar transistors, a comprehensive physics-based large signal heterojunction bipolar transistor (HBT) model is developed for integrated-circuit simulation. The model can be implemented directly into circuit simulators such as SPICE. Heterojunction effects as well as physical properties of III-V compound materials are included. A small-signal heterojunction bipolar transistor model can be readily derived by linearizing the circuit elements in the model developed
Keywords :
bipolar integrated circuits; circuit analysis computing; heterojunction bipolar transistors; semiconductor device models; Gummel-Poon model; HBT model; III-V compound materials; SPICE; circuit simulators; heterojunction bipolar transistor; heterojunction effects; integrated circuit simulation; large signal model; small signal model; Bipolar integrated circuits; Bipolar transistors; Capacitance; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; SPICE; Silicon; Thermionic emission;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1989. Proceedings., Eighth
Conference_Location :
Westborough, MA
DOI :
10.1109/UGIM.1989.37339
