DocumentCode
2422816
Title
NEMS Devices for Accelerometers Compatible with Thin SOI Technology
Author
Oiller, E. ; Duraffourg, L. ; Delaye, MT ; Grange, H. ; Deneuville, S. ; Bernos, J. ; Dianoux, R. ; Marchi, F. ; Renaud, D. ; Baron, T. ; Andreucci, P. ; Robert, P.
Author_Institution
CEA/LETI, Grenoble
fYear
2007
fDate
16-19 Jan. 2007
Firstpage
180
Lastpage
185
Abstract
The paper presents thin SOI NEMS structures for accelerometers based on thin SOI technology and compatible with "in-IC" integration. Modeling of Casimir force, design of accelerometers, improvement of hybrid e-beam/DUV lithography and FH-vapor release, development of specific AFM characterizations have allowed to fabricate NEMS devices and to provide AFM characterizations.
Keywords
Casimir effect; accelerometers; atomic force microscopy; electron beam lithography; microsensors; ultraviolet lithography; AFM; Casimir force modeling; FH-vapor release; IC integration; NEMS devices; accelerometers design; hybrid e-beam/DUV lithography; thin SOI technology; Accelerometers; CMOS technology; Costs; Delay; Micromechanical devices; Nanoelectromechanical systems; Nanoscale devices; Paper technology; Resonance; Silicon; NEMS; SOI; accelerometer; integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2007. NEMS '07. 2nd IEEE International Conference on
Conference_Location
Bangkok
Print_ISBN
1-4244-0610-2
Type
conf
DOI
10.1109/NEMS.2007.352257
Filename
4160560
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