Title :
10-bit 20MS/S differential SAR ADC for image sensor
Author :
Yang-yu Guo ; Zhao-han Li ; Jing Li ; Xin-yang Wang ; Yu-chun Chang
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
Abstract :
Low-power and small-area implementations are essential in the CMOS image sensor market. At the same time, to achieve high-accuracy and high-speed is very important for ADC studying. This paper presents the design of a 10-bit 20MS/s differential Successive Approximation Register (SAR) ADC with a new switching procedure using for CMOS image sensor application. Compared with conventional 10-bit ADC, the number of capacitors is reduced by 50% and the average switching energy consumption is reduced by 81.26%. The ADC is fabricated in 0.18um CMOS technology and occupies an active area of 750×135um2. The ADC shows a SNDR of 61.33dB, a SFDR of 77.09dB, and an ENOB of 9.89bits with a 566.4KHz sinusoidal input at 20MS/s sampling frequency. The ADC consumes about 750uW at 1.8V supply.
Keywords :
CMOS image sensors; analogue-digital conversion; capacitors; integrated circuit design; low-power electronics; CMOS image sensor; capacitor; differential SAR ADC; frequency 566.4 kHz; noise figure 61.33 dB; noise figure 77.09 dB; size 0.18 mum; successive approximation register; switching energy consumption; switching procedure; voltage 1.8 V; word length 10 bit; Abstracts; CMOS integrated circuits; CMOS technology; Indium phosphide; Logic gates; MOS devices; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021576