DocumentCode :
242304
Title :
A novel high-speed CMOS fully-differentical ring VCO
Author :
Changchun Zhang ; Zhizhen Li ; Junliang Fang ; Jiang Zhao ; YuFeng Guo ; Jing Chen
Author_Institution :
Jiangsu Provincial Eng. Lab. of RF Integration & Micro-assembly, Nanjing Univ. of Posts & Telecommun., Nanjing, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
Based on a standard 0.18μm CMOS technology, a novel four-stage fully-differential ring voltage-controlled oscillator (VCO) with high speed, low power and a wide tuning range is proposed. The inductive shunt peaking technique with active inductors is employed to expand the bandwidth of the delay cell, and a pair of PMOS transistors with gates connected to the ground is added to to increase the oscillation frequency and improve the linearity of the VCO. Simulation results show that, from a supply voltage of 1.8V, a tuning range of 4.9~5.9 GHz, a phase noise of -86.7dBc/Hz@1MHz, and a FOM of -149.7 at a oscillating frequency of 5.4 GHz are achieved. Only a power of 8.1mW is consumed.
Keywords :
CMOS integrated circuits; MOSFET; inductors; microwave oscillators; voltage-controlled oscillators; PMOS transistors; active inductors; delay cell; frequency 4.9 GHz to 5.9 GHz; high-speed CMOS fully-differential ring VCO; inductive shunt peaking technique; novel four-stage fully-differential ring voltage-controlled oscillator; oscillation frequency; power 8.1 mW; size 0.18 mum; voltage 1.8 V; CMOS integrated circuits; CMOS technology; Delays; Phase noise; Tuning; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021580
Filename :
7021580
Link To Document :
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