Title :
Losses in GaAs microstrip
Author :
Goldfarb, M.E. ; Platzker, A.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Abstract :
Data on the losses associated with microstrip transmission lines with impedances from approximately 20 to 90 Omega at frequencies up to 40 GHz for structures fabricated on 100- mu m ( mu -mil) GaAs are presented. The data were taken from transmission measurements of lightly coupled, multiple half-wavelength resonators. A comparison of the loss data with the predicted losses from three popular CAE tools is provided. The loss models agree fairly well with measured data through 40 GHz. Since the measured loss roughly follows a square-law frequency relationship through 20 GHz, it should be possible to adjust the loss below this frequency and above 1 GHz by modifying the resistivity of the conductor in the simulator.<>
Keywords :
III-V semiconductors; gallium arsenide; loss measurement; microwave measurement; resonators; strip line components; strip lines; 1 to 40 GHz; 20 to 90 ohm; CAE; GaAs; III-V semiconductors; loss models; losses; microstrip transmission lines; multiple half-wavelength resonators; square-law frequency relationship; Computer aided engineering; Conductivity; Frequency measurement; Gallium arsenide; Impedance; Loss measurement; Microstrip; Optical coupling; Propagation losses; Transmission line measurements;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99643
