Title :
Properties of FET parameter statistical data bases
Author :
Purviance, J. ; Meehan, M. ; Collins, D.
Author_Institution :
Dept. of Electr. Eng., Idaho Univ., Moscow, ID, USA
Abstract :
Statistical databases are often used to characterize the statistics of a FET. It is shown that a database containing the FET model parameter marginal probability density functions and covariance matrix is not sufficient to describe the FET´s S-parameter statistics. This result is important to those developing statistical databases for GaAs FETs. The implications of this work for simulation and CAD are discussed, and a solution to this problem, the truth model, is presented.<>
Keywords :
III-V semiconductors; S-parameters; circuit CAD; field effect transistors; semiconductor device models; solid-state microwave devices; CAD; FET parameter; GaAs; III-V semiconductors; S-parameter statistics; covariance matrix; marginal probability density functions; model parameter; statistical data bases; truth model; Covariance matrix; FETs; Fitting; Frequency measurement; Gallium arsenide; Manufacturing processes; Probability density function; Scattering parameters; Statistics; Testing;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99644
