Title :
A Q-band CMOS LNA with common source topology based on algorithmic design methodologies
Author :
Sheng Chen ; Runxi Zhang ; Chunqi Shi ; Yanlin Shi ; Zongsheng Lai
Author_Institution :
Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China
Abstract :
This work presents a low-noise amplifier (LNA), based on algorithmic design methodologies in 0.13μm technology. Spiral inductors were used in the on-chip impedance matching networks, rather than transmission lines. This three-stage common source LNA achieves the minimum noise figure of 4.97 dB at 45 GHz with a compact chip size of 0.62 mm2 (including all the testing pads). The 3-dB frequency bandwidth ranges from 42 to 50 GHz and the peak gain of 19 dB at 45 GHz. The whole circuit dissipates 27mW from 1.5-V supply.
Keywords :
CMOS integrated circuits; current density; impedance matching; low noise amplifiers; millimetre wave amplifiers; Q-band CMOS LNA; algorithmic design methodologies; common source topology; frequency 45 GHz; low-noise amplifier; on-chip impedance matching networks; power 27 mW; spiral inductors; three-stage common source LNA; voltage 1.5 V; Abstracts; CMOS integrated circuits; CMOS technology; Microwave FET integrated circuits; Microwave amplifiers; Microwave integrated circuits; Transistors; current density; fMAX; fT; inductor; low-noise amplifier (LNA); mm-wave;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021602
