A Q-band CMOS LNA with common source topology based on algorithmic design methodologies

Author

Sheng Chen ; Runxi Zhang ; Chunqi Shi ; Yanlin Shi ; Zongsheng Lai

Author_Institution

Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

This work presents a low-noise amplifier (LNA), based on algorithmic design methodologies in 0.13μm technology. Spiral inductors were used in the on-chip impedance matching networks, rather than transmission lines. This three-stage common source LNA achieves the minimum noise figure of 4.97 dB at 45 GHz with a compact chip size of 0.62 mm² (including all the testing pads). The 3-dB frequency bandwidth ranges from 42 to 50 GHz and the peak gain of 19 dB at 45 GHz. The whole circuit dissipates 27mW from 1.5-V supply.

Keywords

CMOS integrated circuits; current density; impedance matching; low noise amplifiers; millimetre wave amplifiers; Q-band CMOS LNA; algorithmic design methodologies; common source topology; frequency 45 GHz; low-noise amplifier; on-chip impedance matching networks; power 27 mW; spiral inductors; three-stage common source LNA; voltage 1.5 V; Abstracts; CMOS integrated circuits; CMOS technology; Microwave FET integrated circuits; Microwave amplifiers; Microwave integrated circuits; Transistors; current density; fMAX; fT; inductor; low-noise amplifier (LNA); mm-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021602

Filename

7021602