• DocumentCode
    242360
  • Title

    RF WIDE-band amplifier multichip module

  • Author

    Xiubo Liu ; Hongjiang Wu

  • Author_Institution
    Heibei Semicond. Res. Inst., Shijiazhuang, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, a numerical control gain wideband (from 2GHz to 18GHz) amplifier module based on monolithic microwave integrated circuit is presented. In order to reduce the input and output return loss, get smooth curve of gain and improve the transmission performance, therefor, the structure and matching network is an essential issue in the design of the module. On the basis of this, the module includes power equalize, numerical control attenuator, three low noise amplifiers and two switches. The work is focus on getting smooth curve of the gain and optimizing the structure of the multichip module. The measurement results show that this module has no less than 27 dB small signal gain,the smooth curve of gain is about ±2 dB and low VSWR better than 1.6 over the operating frequency range from 2GHz to 18GHz.
  • Keywords
    MMIC amplifiers; UHF amplifiers; UHF integrated circuits; multichip modules; numerical control; wideband amplifiers; RF wideband amplifier multichip module; VSWR; frequency 2 GHz to 18 GHz; gain smooth curve; input return loss; low noise amplifiers; matching network; monolithic microwave integrated circuit; multichip module; numerical control attenuator; numerical control gain wideband amplifier module; output return loss; power equalize; small signal gain; switches; Abstracts; Epitaxial growth; Gallium arsenide; HEMTs; Radio frequency; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021605
  • Filename
    7021605