Title :
Ionizing radiation effects in EPF10K50E and XC2S150 programmable logic devices
Author :
Gingrich, D.M. ; Buchanan, N.J. ; Chen, L. ; Liu, S.
Author_Institution :
Centre for Subatomic Res., Alberta Univ., Edmonton, Alta., Canada
Abstract :
We have measured the effects of total ionizing dose in Altera FLEX 10K50E embedded programmable logic devices and Xilinx Spartan-II 150 field program gate arrays. The devices were irradiated with X-rays at a dose rate of about 12 cGy(SiO2)/s. An average total dose of 830 Gy(SiO2) was absorbed by the FLEX 10KE and 330 Gy(SiO2) by the Spartan-II before the power supply current increased.
Keywords :
X-ray effects; field programmable gate arrays; integrated circuit reliability; integrated circuit testing; logic testing; programmable logic devices; 330 Gy; 830 Gy; Altera FLEX 10K50E embedded programmable logic devices; EPF10K50E programmable logic devices; FPGA; SiO2-Si; X-ray irradiation; XC2S150 programmable logic devices; Xilinx Spartan-II 150 field program gate arrays; average total dose; dose rate; ionizing radiation effects; power supply current; CMOS logic circuits; Field programmable gate arrays; Ionizing radiation; Logic arrays; Logic devices; Pipelines; Programmable logic arrays; Programmable logic devices; Registers; X-rays;
Conference_Titel :
Radiation Effects Data Workshop, 2002 IEEE
Print_ISBN :
0-7803-7544-0
DOI :
10.1109/REDW.2002.1045530
