Title :
A novel read tracking circuit design based on compensation circuit
Author :
Li Erliang ; Zhang Lijun ; Li Youzhong ; Zhang Qixiao ; Jiang Wei ; Hu Yuqing
Author_Institution :
Sch. of Urban Rail Transp., Soochow Univ., Suzhou, China
Abstract :
In common SRAM read tracking circuit, process and temperature fluctuations may cause SRAM read failure. Thus, a novel read tracking circuit is proposed using corner compensation technology and temperature compensation technology in this paper. The proposed tracking circuit compensates the dummy bit line for different current when working in different process corners and temperature, which dramatically reduces the impact of process corner and temperature. The proposed circuit is simulated based on the 28 nm CMOS process and the result proved that the proposed circuit is valid and reliable.
Keywords :
CMOS digital integrated circuits; SRAM chips; CMOS process; SRAM; comer compensation technology; dummy bit line; process fluctuations; read tracking circuit design; size 28 nm; temperature compensation technology; temperature fluctuations; Abstracts; Educational institutions; MOS devices; Random access memory; Reliability;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021610