DocumentCode
242370
Title
A novel read tracking circuit design based on compensation circuit
Author
Li Erliang ; Zhang Lijun ; Li Youzhong ; Zhang Qixiao ; Jiang Wei ; Hu Yuqing
Author_Institution
Sch. of Urban Rail Transp., Soochow Univ., Suzhou, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
In common SRAM read tracking circuit, process and temperature fluctuations may cause SRAM read failure. Thus, a novel read tracking circuit is proposed using corner compensation technology and temperature compensation technology in this paper. The proposed tracking circuit compensates the dummy bit line for different current when working in different process corners and temperature, which dramatically reduces the impact of process corner and temperature. The proposed circuit is simulated based on the 28 nm CMOS process and the result proved that the proposed circuit is valid and reliable.
Keywords
CMOS digital integrated circuits; SRAM chips; CMOS process; SRAM; comer compensation technology; dummy bit line; process fluctuations; read tracking circuit design; size 28 nm; temperature compensation technology; temperature fluctuations; Abstracts; Educational institutions; MOS devices; Random access memory; Reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021610
Filename
7021610
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