• DocumentCode
    242370
  • Title

    A novel read tracking circuit design based on compensation circuit

  • Author

    Li Erliang ; Zhang Lijun ; Li Youzhong ; Zhang Qixiao ; Jiang Wei ; Hu Yuqing

  • Author_Institution
    Sch. of Urban Rail Transp., Soochow Univ., Suzhou, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In common SRAM read tracking circuit, process and temperature fluctuations may cause SRAM read failure. Thus, a novel read tracking circuit is proposed using corner compensation technology and temperature compensation technology in this paper. The proposed tracking circuit compensates the dummy bit line for different current when working in different process corners and temperature, which dramatically reduces the impact of process corner and temperature. The proposed circuit is simulated based on the 28 nm CMOS process and the result proved that the proposed circuit is valid and reliable.
  • Keywords
    CMOS digital integrated circuits; SRAM chips; CMOS process; SRAM; comer compensation technology; dummy bit line; process fluctuations; read tracking circuit design; size 28 nm; temperature compensation technology; temperature fluctuations; Abstracts; Educational institutions; MOS devices; Random access memory; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021610
  • Filename
    7021610