Title :
A tantalum oxide memristor for artificial synapse applications
Author :
Zhenxing Zhang ; Yimao Cai ; Muxi Yu ; Yue Pan ; Yichen Fang ; Binbin Guo ; Ru Huang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Memristor has attracted significant attention in recent years because of its capability to act as artificial synapse in neuromorphic systems. In this paper, a memristor is demonstrated based on tantalum oxide. Multiple resistance states can be achieved. The resistance switching mechanism of continuous sets and resets is discussed. The essential synaptic behaviors of potentiation and depression are achieved.
Keywords :
memristors; neural chips; artificial synapse applications; continuous resets; depression; essential synaptic behaviors; memristor; multiple resistance states; neuromorphic systems; potentiation; resistance switching mechanism; tantalum oxide; Abstracts; Memristor; synaptic behavior; tantalum oxide;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021614
