DocumentCode
242377
Title
A tantalum oxide memristor for artificial synapse applications
Author
Zhenxing Zhang ; Yimao Cai ; Muxi Yu ; Yue Pan ; Yichen Fang ; Binbin Guo ; Ru Huang
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
Memristor has attracted significant attention in recent years because of its capability to act as artificial synapse in neuromorphic systems. In this paper, a memristor is demonstrated based on tantalum oxide. Multiple resistance states can be achieved. The resistance switching mechanism of continuous sets and resets is discussed. The essential synaptic behaviors of potentiation and depression are achieved.
Keywords
memristors; neural chips; artificial synapse applications; continuous resets; depression; essential synaptic behaviors; memristor; multiple resistance states; neuromorphic systems; potentiation; resistance switching mechanism; tantalum oxide; Abstracts; Memristor; synaptic behavior; tantalum oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021614
Filename
7021614
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