Title :
Single event transient (SET) sensitivity of Advanced BiCMOS Technology (ABT) buffers and transceivers
Author :
Koga, R. ; Yu, P. ; Crain, S. ; Crawford, K. ; Chao, K.
Author_Institution :
Aerosp. Corp., Los Angeles, CA, USA
Abstract :
Heavy ion induced single event transients for various Advanced BiCMOS Technology (ABT) buffers and transceivers are presented. For our test samples there is a wide variation in the transient sensitivity. Some test samples are sensitive to single event latch-up.
Keywords :
BiCMOS integrated circuits; buffer circuits; integrated circuit testing; ion beam effects; transient analysis; transient response; ABT buffer channels; ABT transceiver channels; Advanced BiCMOS Technology; heavy ion induced single event transients; single event latch-up; single event transient sensitivity; test samples; transient sensitivity; BiCMOS integrated circuits; Chaos; Electrostatic discharge; Impedance; Power supplies; Protection; Telephony; Testing; Transceivers; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2002 IEEE
Print_ISBN :
0-7803-7544-0
DOI :
10.1109/REDW.2002.1045535
