• DocumentCode
    2423797
  • Title

    Single event transient (SET) sensitivity of Advanced BiCMOS Technology (ABT) buffers and transceivers

  • Author

    Koga, R. ; Yu, P. ; Crain, S. ; Crawford, K. ; Chao, K.

  • Author_Institution
    Aerosp. Corp., Los Angeles, CA, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    67
  • Lastpage
    74
  • Abstract
    Heavy ion induced single event transients for various Advanced BiCMOS Technology (ABT) buffers and transceivers are presented. For our test samples there is a wide variation in the transient sensitivity. Some test samples are sensitive to single event latch-up.
  • Keywords
    BiCMOS integrated circuits; buffer circuits; integrated circuit testing; ion beam effects; transient analysis; transient response; ABT buffer channels; ABT transceiver channels; Advanced BiCMOS Technology; heavy ion induced single event transients; single event latch-up; single event transient sensitivity; test samples; transient sensitivity; BiCMOS integrated circuits; Chaos; Electrostatic discharge; Impedance; Power supplies; Protection; Telephony; Testing; Transceivers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2002 IEEE
  • Print_ISBN
    0-7803-7544-0
  • Type

    conf

  • DOI
    10.1109/REDW.2002.1045535
  • Filename
    1045535
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2423797